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High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer
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10.1063/1.1351535
/content/aip/journal/apl/78/9/10.1063/1.1351535
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/9/10.1063/1.1351535
/content/aip/journal/apl/78/9/10.1063/1.1351535
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/content/aip/journal/apl/78/9/10.1063/1.1351535
2001-02-26
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/78/9/10.1063/1.1351535
10.1063/1.1351535
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