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Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
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10.1063/1.1402649
/content/aip/journal/apl/79/10/10.1063/1.1402649
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/10/10.1063/1.1402649
/content/aip/journal/apl/79/10/10.1063/1.1402649
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/content/aip/journal/apl/79/10/10.1063/1.1402649
2001-09-03
2014-09-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/10/10.1063/1.1402649
10.1063/1.1402649
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