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Influence of Si growth temperature for embedding β- and resultant strain in β- on light emission from light-emitting diodes
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10.1063/1.1405001
/content/aip/journal/apl/79/12/10.1063/1.1405001
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/12/10.1063/1.1405001
/content/aip/journal/apl/79/12/10.1063/1.1405001
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/content/aip/journal/apl/79/12/10.1063/1.1405001
2001-09-17
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/12/10.1063/1.1405001
10.1063/1.1405001
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