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Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride
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10.1063/1.1405806
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    Affiliations:
    1 Engineering Department 1, System-LSI Division, Sanyo Electric Company Ltd., Oizumi-Machi 370-0596, Japan
    2 RIKEN (The Institute of Physical and Chemical Research), Wako-shi 351-0198, Japan
    3 Department of Electrical, Electronics, and Computer Engineering, Waseda University, Shinjuku-ku 169-8555, Japan
    4 Optical Radiation Section, Electrotechnical Laboratory, Tsukuba 305-8568, Japan
    5 Department of Electrical, Electronics, and Computer Engineering, Waseda University, Shinjuku-ku 169-8555, Japan
    Appl. Phys. Lett. 79, 1995 (2001); http://dx.doi.org/10.1063/1.1405806
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/content/aip/journal/apl/79/13/10.1063/1.1405806
2001-09-24
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of photoluminescence around 2.6–2.9 eV in silicon oxynitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/13/10.1063/1.1405806
10.1063/1.1405806
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