No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Switch-free read operation design and measurement of magnetic tunnel junction magnetic random access memory arrays
1.R. Scheuerlein, W. Gallagher, S. Parkin, A. Lee, S. Ray, R. Robertazzi, and W. Reohr, Dig. Tech. Pap.-IEEE Int. Solid-State Circuts Conf., 128 (2000).
2.J. M. Daughton, Thin Solid Films 216, 162 (1992).
3.R. E. Scheuerlein, Proceeding of the 1998 International Nonvolatile Memory Technology Conference (IEEE, Piscataway, NJ, 1998), p. 47.
4.F. Z. Wang, Appl. Phys. Lett. 77, 2036 (2000).
5.T. L. Floyd, Basic Operational Amplifiers and Linear Integrated Circuits (Macmillan, New York, 1994).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month