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Effects of step-graded interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition
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10.1063/1.1412824
/content/aip/journal/apl/79/17/10.1063/1.1412824
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/17/10.1063/1.1412824
/content/aip/journal/apl/79/17/10.1063/1.1412824
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/content/aip/journal/apl/79/17/10.1063/1.1412824
2001-10-22
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of step-graded AlxGa1−xN interlayer on properties of GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/17/10.1063/1.1412824
10.1063/1.1412824
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