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Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
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10.1063/1.1413956
/content/aip/journal/apl/79/17/10.1063/1.1413956
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/17/10.1063/1.1413956
/content/aip/journal/apl/79/17/10.1063/1.1413956
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/content/aip/journal/apl/79/17/10.1063/1.1413956
2001-10-22
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/17/10.1063/1.1413956
10.1063/1.1413956
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