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Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on virtual substrates
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10.1063/1.1417515
/content/aip/journal/apl/79/20/10.1063/1.1417515
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/20/10.1063/1.1417515
/content/aip/journal/apl/79/20/10.1063/1.1417515
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/content/aip/journal/apl/79/20/10.1063/1.1417515
2001-11-12
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/20/10.1063/1.1417515
10.1063/1.1417515
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