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Hole mobility enhancements in strained p-type metal-oxide-semiconductor field-effect transistors grown on relaxed virtual substrates
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10.1063/1.1423774
/content/aip/journal/apl/79/25/10.1063/1.1423774
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/25/10.1063/1.1423774
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/content/aip/journal/apl/79/25/10.1063/1.1423774
2001-12-17
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole mobility enhancements in strained Si/Si1−yGeyp-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex(x<y) virtual substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/25/10.1063/1.1423774
10.1063/1.1423774
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