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Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices
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10.1063/1.1427132
/content/aip/journal/apl/79/25/10.1063/1.1427132
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/25/10.1063/1.1427132
/content/aip/journal/apl/79/25/10.1063/1.1427132
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/content/aip/journal/apl/79/25/10.1063/1.1427132
2001-12-17
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of arsenic concentration profile in gate oxide on electric properties of metal–oxide–silicon devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/25/10.1063/1.1427132
10.1063/1.1427132
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