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Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
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10.1063/1.1427151
/content/aip/journal/apl/79/25/10.1063/1.1427151
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/25/10.1063/1.1427151
/content/aip/journal/apl/79/25/10.1063/1.1427151
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/content/aip/journal/apl/79/25/10.1063/1.1427151
2001-12-17
2014-12-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/25/10.1063/1.1427151
10.1063/1.1427151
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