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Electrical characteristics of a stack gate dielectric for metal–oxide–semiconductor device applications
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10.1063/1.1427155
/content/aip/journal/apl/79/26/10.1063/1.1427155
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/26/10.1063/1.1427155
/content/aip/journal/apl/79/26/10.1063/1.1427155
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/content/aip/journal/apl/79/26/10.1063/1.1427155
2001-12-24
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/26/10.1063/1.1427155
10.1063/1.1427155
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