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Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
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10.1063/1.1430025
/content/aip/journal/apl/79/27/10.1063/1.1430025
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/27/10.1063/1.1430025
/content/aip/journal/apl/79/27/10.1063/1.1430025
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/content/aip/journal/apl/79/27/10.1063/1.1430025
2002-03-13
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/27/10.1063/1.1430025
10.1063/1.1430025
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