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Localized excitons in an multiple-quantum-well laser diode lased at 400 nm
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10.1063/1.1385583
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    Affiliations:
    1 Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
    2 Department of Materials Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan
    3 Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169-8555, Japan
    4 Nitride Semiconductor Research Laboratory, Nichia Corporation, 491 Oka, Kaminaka, Anan, Tokushima 774-8601, Japan
    Appl. Phys. Lett. 79, 341 (2001); http://dx.doi.org/10.1063/1.1385583
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/content/aip/journal/apl/79/3/10.1063/1.1385583
2001-07-16
2014-09-15
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/3/10.1063/1.1385583
10.1063/1.1385583
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