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Subband electron properties of modulation-doped heterostructures with different barrier thicknesses
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10.1063/1.1386620
/content/aip/journal/apl/79/3/10.1063/1.1386620
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/3/10.1063/1.1386620
/content/aip/journal/apl/79/3/10.1063/1.1386620
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/content/aip/journal/apl/79/3/10.1063/1.1386620
2001-07-16
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subband electron properties of modulation-doped AlxGa1−xN/GaN heterostructures with different barrier thicknesses
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/3/10.1063/1.1386620
10.1063/1.1386620
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