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Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
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10.1063/1.1379059
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    Affiliations:
    1 LEMCEL—UPRES—EA 2601—Université du Littoral et de la Côte d’Opale—BP 717 62228 Calais, France
    2 IEMN—DHS—UMR CNRS 9929—Université des Sciences et Technologies de Lille Avenue Poincaré—BP 69—59652 Villeneuve d’Ascq Cedex, France
    3 LAMAC—UPRES—EA 2443—Université de Valenciennes—Hainaut Cambrésis ZI du Champ de l’Abbesse—59600 Maubeuge, France
    4 LMM—CNRS 2 rue H. Dunant 94320 Thiais, France
    Appl. Phys. Lett. 79, 659 (2001); http://dx.doi.org/10.1063/1.1379059
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/content/aip/journal/apl/79/5/10.1063/1.1379059
2001-07-30
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/5/10.1063/1.1379059
10.1063/1.1379059
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