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Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth
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10.1063/1.1389768
/content/aip/journal/apl/79/6/10.1063/1.1389768
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/6/10.1063/1.1389768
/content/aip/journal/apl/79/6/10.1063/1.1389768
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/content/aip/journal/apl/79/6/10.1063/1.1389768
2001-08-06
2014-08-01
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Scitation: Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy: In situ observations and detailed modeling of the growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/6/10.1063/1.1389768
10.1063/1.1389768
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