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Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy
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10.1063/1.1390476
/content/aip/journal/apl/79/6/10.1063/1.1390476
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/6/10.1063/1.1390476
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/content/aip/journal/apl/79/6/10.1063/1.1390476
2001-08-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C–SiC/Si(100) heteroepitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/6/10.1063/1.1390476
10.1063/1.1390476
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