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Influence of microstructure on electrical properties of diluted formed by nitrogen implantation
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10.1063/1.1390487
/content/aip/journal/apl/79/7/10.1063/1.1390487
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/7/10.1063/1.1390487
/content/aip/journal/apl/79/7/10.1063/1.1390487
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/content/aip/journal/apl/79/7/10.1063/1.1390487
2001-08-13
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation
http://aip.metastore.ingenta.com/content/aip/journal/apl/79/7/10.1063/1.1390487
10.1063/1.1390487
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