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DEVIATIONS FROM PARABOLIC GROWTH IN THE THERMAL OXIDATION OF SILICON
1.e.g. H. C. Evitts, H. W. Cooper, and S. S. Flaschen, J. Electrochem. Soc. 111, 688 (1964).
2.A. G. Revesz and K. H. Zaininger, J. Electrochem. Soc. 110, 1292 (1963).
3.This is true only if the Engel‐Hauffe mechanism can be neglected [see e.g., O. Kubaschewski and B. E. Hopkins, Oxidation of Metals and Alloys, (Butterworths, London, 1962), p. 254].
4.A. G. Revesz and K. H. Zaininger, J. Phys. (Paris) 25, 66 (1964).
5.While this manuscript was being prepared, B. E. Deal and A. S. Grove, as well as W. Pliskin expressed similar ideas at the Silicon Interface Specialists Conference in Las Vegas, Nov. 15, 1965.
6.A. G. Revesz and K. H. Zaininger, IEEE Trans. Electron Devices, in press.
7.K. Fischbeck, Z. Elektrochem. 39, 316 (1933).
8.R. J. Archer, J. Electrochem. Soc. 104, 619 (1957).
9.J. T. Law, J. Phys. Chem. 61, 1200 (1957).
10.Even though Law used the representation in accordance with Eq. (1) he did not utilize the intercept values to calculate the linear rate constant.
11.A. G. Revesz, IEEE Trans. Electron Devices ED‐12, 97 (1965).
12.T. B. Grimley and B. M. W. Trapnell, Proc. Roy. Soc. Ser. A. 234, 405 (1956).
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