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VOLTAGE DEPENDENCE OF THE BARRIER HEIGHTS IN Al2O3 TUNNEL JUNCTIONS
1.J. G. Simmons, Phys. Letters 16, 233 (1965).
2.A. Braunstein, M. Braunstein, G. S. Picus, and C. A. Mead, Phys. Rev. Letters 14, 219 (1965).
3.J. L. Miles and P. H. Smith, J. Electrochem. Soc. 110, 1240 (1963).
4.One should, in general, use the high frequency dielectric constant, but it was shown in ref. 2 that hot electrons in the conduction band quickly give up their energy to the lattice making the low‐frequency dielectric constant more appropriate for this case.
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6.H. Y. Ku and F. G. Ullman, J. Appl. Phys. 35, 265 (1964).
7.J. G. Simmons, Appl. Phys. Letters 6, 54 (1965).
8.The temperature shift is not due to the temperature dependence of the Fermi‐Dirac electron distributions in the electrodes. Barrier heights obtained from Fowler plots are the same as those obtained by extrapolation to threshold for both temperatures —if the Fermi distribution caused the shift, the Fowler plots would yield the same barrier heights for all temperatures.
9.D. Kahng and S. H. Wemple, J. Appl. Phys. 36, 2925 (1965).
10.C. R. Crowell, H. B. Shore, and E. E. LaBate, J. Appl. Phys. 36, 3843 (1965).
11.E. Guth and C. J. Mullin, Phys. Rev. 59, 575 (1941).
12.C. E. Drumheller and F. E. Card, “Photoemission Through Thin Film Dielectrics,” AFAL‐TR‐65‐167, Wright‐Patterson AFB, Ohio, June 1965.
13.See, for example, T. E. Hartman, J. Appl. Phys. 35, 3283 (1964) and references contained therein.
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