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EFFECTS OF X‐RAY IRRADIATION ON THE CHARACTERISTICS OF METAL‐OXIDE‐SILICON STRUCTURES
1.E. H. Snow, A. S. Grove, B. E. Deal, and C. T. Sah, J Appl. Phys. 36, 1664 (1965).
2.F. Levenberger, Proc. IEEE 53, 1761 (1965).
3.H. G. Carlson, C. R. Fuller, and J. Osborn, J. Electrochem. Soc. 112, 259C (1965).
4.E. Yon, A. B. Kuper, and W. H. Ko, J. Electrochem. Soc. 112, 259C (1965).
5.R. J. Mattauch and R. W. Lade, Proc. IEEE 53, 1738 (1965).
6.D. Green, J. E. Sandor, T. W. O’Keeffe, and R. K. Matta, Appl. Phys. Letters 6, 3 (1965).
7.J. R. Szedon and J. E. Sandor, Appl. Phys. Letters 6, 8 (1965).
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9.The Theoretical vs V curve is computed from an analytical approximation to the width of the majority carrier depletion layer. See C. T. Sah, “Theory of Metal‐Oxide‐Semiconductor Capacitor,” Solid State Electron. Laboratory Technical Report No. 1, University of Illinois, December 14, 1964.
9.The accuracy of this approximation is considerably improved over the graphical solution presented previously by one of us. See “Investigation of Thermally Oxidized Silicon Surfaces Using Metal‐Oxide‐Semiconductor Structures,” Solid‐State Electron. 8, 145 (1965).
10.E. Kooi, Philips Res. Report 20, 306 (1965).
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