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Improving interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing
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10.1063/1.1445806
/content/aip/journal/apl/80/10/10.1063/1.1445806
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/10/10.1063/1.1445806
/content/aip/journal/apl/80/10/10.1063/1.1445806
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/content/aip/journal/apl/80/10/10.1063/1.1445806
2002-03-11
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving SiO2/SiGe interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/10/10.1063/1.1445806
10.1063/1.1445806
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