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Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy
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10.1063/1.1455695
/content/aip/journal/apl/80/10/10.1063/1.1455695
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/10/10.1063/1.1455695
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/content/aip/journal/apl/80/10/10.1063/1.1455695
2002-03-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/10/10.1063/1.1455695
10.1063/1.1455695
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