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Si-doped cubic GaN grown on a Si(001) substrate with a thin flat SiC buffer layer
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10.1063/1.1467971
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    Affiliations:
    1 Joint Research Center for Atom Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-0046, Japan
    2 Furukawa Electric Company, Ltd., Yokohama R&D Laboratories, 2-4-3 Okano, Nishi-ku, Yokohama 220-0073, Japan
    3 Joint Research Center for Atom Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-0046, Japan
    4 Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
    Appl. Phys. Lett. 80, 2472 (2002); http://dx.doi.org/10.1063/1.1467971
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/content/aip/journal/apl/80/14/10.1063/1.1467971
2002-04-02
2014-07-11
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Si-doped cubic GaN grown on a Si(001) substrate with a thin flat SiC buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/14/10.1063/1.1467971
10.1063/1.1467971
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