Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy
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16.The residual band bending measured on sample positions far from the metal–semiconductor interface was of the order of 0.1 eV and negligible for the purpose of the present analysis. In a separate experiment, we also checked that, despite the high density of photons, no detectable surface photovoltage was present on n-doped GaAs at room temperature, at least for a doping level
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