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Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method
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10.1063/1.1469652
/content/aip/journal/apl/80/15/10.1063/1.1469652
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/15/10.1063/1.1469652
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/content/aip/journal/apl/80/15/10.1063/1.1469652
2002-04-10
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-dimensional dopant concentration profiles from ultrashallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/15/10.1063/1.1469652
10.1063/1.1469652
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