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Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of (0001) substrates
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10.1063/1.1472481
/content/aip/journal/apl/80/16/10.1063/1.1472481
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/16/10.1063/1.1472481
/content/aip/journal/apl/80/16/10.1063/1.1472481
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/content/aip/journal/apl/80/16/10.1063/1.1472481
2002-04-16
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al2O3 (0001) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/16/10.1063/1.1472481
10.1063/1.1472481
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