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Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition
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10.1063/1.1476058
/content/aip/journal/apl/80/18/10.1063/1.1476058
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/18/10.1063/1.1476058
/content/aip/journal/apl/80/18/10.1063/1.1476058
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/content/aip/journal/apl/80/18/10.1063/1.1476058
2002-04-29
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/18/10.1063/1.1476058
10.1063/1.1476058
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