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Excellent thermal stability of stack structure for metal–oxide–semiconductor gate dielectrics application
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10.1063/1.1477266
/content/aip/journal/apl/80/18/10.1063/1.1477266
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/18/10.1063/1.1477266
/content/aip/journal/apl/80/18/10.1063/1.1477266
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/content/aip/journal/apl/80/18/10.1063/1.1477266
2002-04-29
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/18/10.1063/1.1477266
10.1063/1.1477266
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