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Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
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10.1063/1.1432751
/content/aip/journal/apl/80/2/10.1063/1.1432751
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/2/10.1063/1.1432751
/content/aip/journal/apl/80/2/10.1063/1.1432751
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/content/aip/journal/apl/80/2/10.1063/1.1432751
2002-01-14
2014-09-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/2/10.1063/1.1432751
10.1063/1.1432751
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