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Electron lifetime of heavily Be-doped as a function of growth temperature and doping density
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10.1063/1.1483126
/content/aip/journal/apl/80/22/10.1063/1.1483126
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/22/10.1063/1.1483126
/content/aip/journal/apl/80/22/10.1063/1.1483126
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/content/aip/journal/apl/80/22/10.1063/1.1483126
2002-05-23
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/22/10.1063/1.1483126
10.1063/1.1483126
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