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Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling
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10.1063/1.1483389
/content/aip/journal/apl/80/22/10.1063/1.1483389
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/22/10.1063/1.1483389
/content/aip/journal/apl/80/22/10.1063/1.1483389
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/content/aip/journal/apl/80/22/10.1063/1.1483389
2002-05-23
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/22/10.1063/1.1483389
10.1063/1.1483389
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