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Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment
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10.1063/1.1484249
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    Affiliations:
    1 Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
    2 Technology Liaison Office, Semiconductor Company, Matsushita Electric Industrial Company, Ltd., 1-1-30, Shibadaimon, Minato-ku, Tokyo 105-8586, Japan
    3 Institute of Scientific and Industrial Research, and CREST, Japan Science and Technology Corporation, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan
    Appl. Phys. Lett. 80, 4552 (2002); http://dx.doi.org/10.1063/1.1484249
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/content/aip/journal/apl/80/24/10.1063/1.1484249
2002-06-10
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/24/10.1063/1.1484249
10.1063/1.1484249
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