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Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment
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10.1063/1.1484249
/content/aip/journal/apl/80/24/10.1063/1.1484249
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/24/10.1063/1.1484249
/content/aip/journal/apl/80/24/10.1063/1.1484249
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/content/aip/journal/apl/80/24/10.1063/1.1484249
2002-06-10
2015-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Decrease in the leakage current density of Si-based metal–oxide–semiconductor diodes by cyanide treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/24/10.1063/1.1484249
10.1063/1.1484249
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