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Ohmic contacts to p-type GaN mediated by polarization fields in thin capping layers
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10.1063/1.1445807
/content/aip/journal/apl/80/6/10.1063/1.1445807
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/6/10.1063/1.1445807
/content/aip/journal/apl/80/6/10.1063/1.1445807
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/content/aip/journal/apl/80/6/10.1063/1.1445807
2002-02-11
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1−xN capping layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/80/6/10.1063/1.1445807
10.1063/1.1445807
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