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Low-resistivity, p-type SiC layers produced by Al implantation and ion-beam-induced crystallization
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10.1063/1.1490145
/content/aip/journal/apl/81/1/10.1063/1.1490145
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/1/10.1063/1.1490145
/content/aip/journal/apl/81/1/10.1063/1.1490145
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/content/aip/journal/apl/81/1/10.1063/1.1490145
2002-06-25
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-resistivity, p-type SiC layers produced by Al implantation and ion-beam-induced crystallization
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/1/10.1063/1.1490145
10.1063/1.1490145
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