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Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
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10.1063/1.1506793
/content/aip/journal/apl/81/11/10.1063/1.1506793
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/11/10.1063/1.1506793
/content/aip/journal/apl/81/11/10.1063/1.1506793
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/content/aip/journal/apl/81/11/10.1063/1.1506793
2002-09-05
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/11/10.1063/1.1506793
10.1063/1.1506793
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