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Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted barrier
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10.1063/1.1508413
/content/aip/journal/apl/81/12/10.1063/1.1508413
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/12/10.1063/1.1508413
/content/aip/journal/apl/81/12/10.1063/1.1508413
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/content/aip/journal/apl/81/12/10.1063/1.1508413
2002-09-09
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduced temperature and bias-voltage dependence of the magnetoresistance in magnetic tunnel junctions with Hf-inserted Al2O3 barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/12/10.1063/1.1508413
10.1063/1.1508413
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