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Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
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10.1063/1.1508414
/content/aip/journal/apl/81/12/10.1063/1.1508414
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/12/10.1063/1.1508414
/content/aip/journal/apl/81/12/10.1063/1.1508414
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/content/aip/journal/apl/81/12/10.1063/1.1508414
2002-09-09
2014-09-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/12/10.1063/1.1508414
10.1063/1.1508414
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