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Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes
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10.1063/1.1509478
/content/aip/journal/apl/81/13/10.1063/1.1509478
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/13/10.1063/1.1509478
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/content/aip/journal/apl/81/13/10.1063/1.1509478
2002-09-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/13/10.1063/1.1509478
10.1063/1.1509478
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