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Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on face
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10.1063/1.1512956
/content/aip/journal/apl/81/16/10.1063/1.1512956
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/16/10.1063/1.1512956
/content/aip/journal/apl/81/16/10.1063/1.1512956
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/content/aip/journal/apl/81/16/10.1063/1.1512956
2002-10-07
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/16/10.1063/1.1512956
10.1063/1.1512956
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