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Frequency characterization and modeling of interface traps in gate dielectric stack from a capacitance point-of-view
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10.1063/1.1518561
/content/aip/journal/apl/81/18/10.1063/1.1518561
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/18/10.1063/1.1518561
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/content/aip/journal/apl/81/18/10.1063/1.1518561
2002-10-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/18/10.1063/1.1518561
10.1063/1.1518561
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