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Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)
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10.1063/1.1519962
/content/aip/journal/apl/81/19/10.1063/1.1519962
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/19/10.1063/1.1519962
/content/aip/journal/apl/81/19/10.1063/1.1519962
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/content/aip/journal/apl/81/19/10.1063/1.1519962
2002-10-28
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preferential carbon etching by hydrogen inside hexagonal voids of 6H-SiC(0001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/19/10.1063/1.1519962
10.1063/1.1519962
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