No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
1.F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, Appl. Phys. Lett. 71, 3251 (1997).
2.H. Mohseni, M. Razeghi, G. J. Brown, and Y. S. Park, Appl. Phys. Lett. 78, 2107 (2001).
3.Y. Wei, A. Gin, M. Razeghi, and G. Brown, Appl. Phys. Lett. 80, 3262 (2002).
4.J. E. Huffman, A. G. Crouse, B. L. Halleck, and T. V. Downes, J. Appl. Phys. 72, 273 (1992).
5.D. G. Esaev and S. P. Sinitsa, Semiconductors 35, 459 (2001).
6.D. N. Talwar, J. P. Loehr, and B. Jogai, Phys. Rev. B 49, 10345 (1994).
7.“” is a positive integer, the dashes represent chemical bonds, and the superlattice formula is written in the real order of atomic layers.
8.Denoted previously as 17InAs/7GaSb with InSb interfaces in Y. Wei, A. Gin, M. Razeghi, and G. Brown, Appl. Phys. Lett. 80, 3262 (2002).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month