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Interfacial properties of single-crystalline high-k gate dielectrics directly grown on Si (111)
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10.1063/1.1526169
/content/aip/journal/apl/81/23/10.1063/1.1526169
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/23/10.1063/1.1526169
/content/aip/journal/apl/81/23/10.1063/1.1526169
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/content/aip/journal/apl/81/23/10.1063/1.1526169
2002-11-25
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial properties of single-crystalline CeO2 high-k gate dielectrics directly grown on Si (111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/23/10.1063/1.1526169
10.1063/1.1526169
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