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Effect of charge transport through silicon nitride on thin gate oxide reliability
1.M. Quirk and J. Serda, Semiconductor Manufacturing Technology (Prentice-Hall, New York), p. 214.
2.M. Joshi, J. P. McVittie, and K. Saraswat, Proceedings of the 5th International Symposium on Plasma Process-Induced Damage, Santa Clara, CA (2000), p. 23.
3.J. Frenkel, Phys. Rev. 54, 647 (1938).
4.S. R. Nariani and C. T. Gabriel, IEEE Electron Device Lett. 16, 242 (1994).
5.M. Quirk and J. Serda, Semiconductor Manufacturing Technology (Prentice-Hall, New York), p. 455.
6.C. T. Gabriel, J. Vac. Sci. Technol. A 17, 1494 (1999).
7.C. T. Gabriel and J. P. McVittie, Solid State Technol. 81 (1992).
8.The relation between the cumulative distribution functions and measured on capacitors of area and is (see, for example Ref. 9): From this equation, it follows that the 90% value for 0.18 capacitors (1350 is four orders of magnitude higher than for the 0.6 capacitors (0.13 .
9.R. Degraeve, J. L. Ogier, R. Bellens, Ph. Roussel, G. Groeseneken, and H. E. Maes, Proceedings International Reliability Physics Symposium (IRPS) (1996), pp. 44–54.
10.The charge to breakdown at 100 °C is about two orders of magnitude lower than that at room temperature (see Ref. 11).
11.P. P. Apte, T. Kubota, and K. C. Saraswat, J. Electrochem. Soc. 140, 770 (1993).
12.S. M. Sze, J. Appl. Phys. 38, 2951 (1967).
13.The value was estimated from current–voltage measurements performed on 0.42 capacitors. The measurements yielded φ and values similar to Ref. 12.
14.K. P. Cheung and C. S. Pai, IEEE Electron Device Lett. 16, 220 (1995).
15.T. H. Ning, J. Appl. Phys. 47, 3203 (1976).
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