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Formation of the deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
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10.1063/1.1529314
/content/aip/journal/apl/81/25/10.1063/1.1529314
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/25/10.1063/1.1529314
/content/aip/journal/apl/81/25/10.1063/1.1529314
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/content/aip/journal/apl/81/25/10.1063/1.1529314
2002-12-09
2014-07-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/25/10.1063/1.1529314
10.1063/1.1529314
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