No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Simulation of interface states effect on the scanning capacitance microscopy measurement of junctions
1.J. S. McMurray and C. C. Williams, AIP Conf. Proc. 449, 731 (1998).
2.J. F. Marchiando, J. J. Kopanski, and J. R. Lowney, J. Vac. Sci. Technol. B 16, 463 (1997).
3.V. V. Zavyalov, J. S. McMurray, and C. C. Williams, J. Appl. Phys. 85, 7774 (1999).
4.B. G. Rennex, J. J. Kopanski, and J. F. Marchiando, AIP Conf. Proc. 550, 635 (2001).
5.H. Edwards, R. McGlothlin, R. S. Martin, E. U, M. Gribelyuk, R. Mahaffy, C. K. Shih, R. S. List, and V. A. Ukraintsev, Appl. Phys. Lett. 72, 698 (1998).
6.C. J. Kang, C. K. Kim, J. D. Lera, Y. KuK, K. M. Mang, J. G. Lee, K. S. Suh, and C. C. Williams, Appl. Phys. Lett. 71, 1546 (1997).
7.J. J. Kopanski, J. F. Marchiando, and B. G. Rennex, J. Vac. Sci. Technol. B 18, 409 (2000).
8.J. Yang, Y. T. Yeow, J. J. Kopanski, and W. K. Chim (unpublished).
9.J. Yang, and Y. T. Yeow, in Proceedings of the 2001 6th IEEE International Conference on Solid-state and Integrated Circuit Technology, edited by B. Z. Li, G. P. Ru, X. P. Qu, P. Yu, and H. Iwai (People’s Posts & Telecommunications, Beijing, 2001), Vol. 2, p. 1043.
10.R. N. Kleiman, M. L. O’Malley, F. H. Baumann, J. P. Garno, and G. L. Timp, Tech. Dig. Int. Electron Devices Meet., 691 (1997).
11.G. Y. M. Yu, Ph.D. Thesis, Stanford University, 1999.
12.E. H. Poindexter, G. J. Gerardi, M. E. Ruechel, and P. J. Caplan, J. Appl. Phys. 56, 2844 (1984).
13.E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
14.From the experimental data in Ref. 8, the transition from accumulation to inversion in the curves, which can be obtained by integrating is approximately 2 V, so that is small enough to keep the interface trapped charges nearly undisturbed.
15.MEDICI: Two-Dimensional Device Simulation Program (TMA, Palo Alto, CA, 1997).
16.O. Bowallius and S. Anand, Mater. Sci. Semicond. Process. 4, 81 (2001).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month