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All-optical single-electron read-out devices based on GaN quantum dots
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15.As for point contacts, though, since both reading schemes are based on Coulomb interaction, the measure outcome could be influenced by the presence of spurious charges in the system.
16.For the effect of an in-plane electric field on excitonic wave functions in GaAs QD see Ref. 5. Recently, significant built-in electric fields have been reported also in InGaAs self-assembled QD (R. Rinaldi, private communication).
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