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Enhanced growth of on epitaxial with a sacrificial amorphous Si interlayer
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10.1063/1.1494103
/content/aip/journal/apl/81/5/10.1063/1.1494103
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/5/10.1063/1.1494103
/content/aip/journal/apl/81/5/10.1063/1.1494103
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/content/aip/journal/apl/81/5/10.1063/1.1494103
2002-07-22
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/81/5/10.1063/1.1494103
10.1063/1.1494103
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